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 APT90DR160HJ
ISOTOP(R) Rectifier diode full bridge Power Module
VRRM = 1600V IF = 90A @ Tc = 80C
Application
*
Input mains rectifier
Features * * * * * * * Planar double passivated chips High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227)
Benefits
~ ~ -
+
* * * * * *
Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant
Absolute maximum ratings
Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current Max ratings 1600 t=10ms TC = 90C TJ = 45C 80 850 Unit V
APT90DR160HJ - Rev 0 November, 2009
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-3
APT90DR160HJ
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IR VF VT rT Reverse Current Forward Voltage On - state Voltage On - state Slope resistance Test Conditions VR = 1600V IF = 90A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 50 4 1.3 1.1 0.8 4.8 Max Unit A mA V V m
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 0.85 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
2500 -55
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
0.75 (.030) 0.85 (.033)
25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Dimensions in Millimeters and (Inches)
www.microsemi.com
2-3
APT90DR160HJ - Rev 0 November, 2009
APT90DR160HJ
Typical Performance Curve
Forward Characteristic 180 150 IFSM (A) 120 IF (A) 90 60
TJ=25C TJ=125C
Non-Repetitive Forward Surge Current 1000 800 600 400 200 0 0.01 t (s)
TJ=125C TJ=45C
30 0 0.0 0.4 0.8 VF (V) 1.2 1.6 2.0
50Hz 80% VRRM
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.3 0.2 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.5
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3-3
APT90DR160HJ - Rev 0 November, 2009


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